Sensitivity of Ion Absorption of Room Temperature Operating Single Electron Transistors
Abstract
Nanoelectronic devices form the building blocks of the nanoscaled systems and require innovative technologies for their realization. Single Electron Transistors (SET) is a novel class of nano transistor which operates on the principle of Coulomb blockade. Coulomb blockade effects become dominant when the device dimensions approach few nano-meters. The SET devices are potential candidates for applications in nano sensing, and data storage. Because of the smaller dimensions of the SET devices coupled with their low power requirements for their operation, these devices render a significant advantage in terms of total power required for these sensors and could potentially cut down the weight, the land warrior carries. They enable potentially novel applications to the Future Force Warriors (FFW) and in particular provide revolutionary capabilities to the Land Warrior. The present paper described the application of the room temperature operating SET device towards nano-sensing and the effect of the passivating oxide layer on the sensitivity of the SET device. The sensitivity of the SET gas sensor could be controlled by the thickness of the passivating oxide. The speed of response of the SET sensor was 450 m sec. The applications of SET towards nano-sensing would allow for the realization of nano scaled devices for the Future Combat Systems (FCS).
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2008
- Accession Number
- ADA505733
Entities
People
- Manoranjan Acharya
- P. S. Karre
- Paul L. Bergstrom
Organizations
- Michigan Technological University