Production and Characterization of Silicon Nanostructures for the Advancement of Novel Energetic Formulations
Abstract
This paper details the synthesis and characterization of Silicon (Si) nanostructured powder with a wide variety of morphologies such as nanoparticles, nanowires, nanotubes, etc., produced by DC plasma arc discharge route. These nanostructures were synthesized by controlling the synthesis parameters such as current, voltage, catalyst, gas pressure, etc. The structural, morphological and vibrational properties were investigated using X-ray diffraction, transmission electron microscopy, scanning electron microscopy, nitrogen adsorption-desorption isotherms and Raman Spectrometer. Both bright and dark field imaging were performed in order to study the morphological characteristics of the nanostructures. These images confirm the formation of high aspect ratio nanostructures of Si with diameters of up to 15 nm and lengths in the range of 500 - 1000 nm. Diffraction patterns were recorded to identify the number of phases formed and determine the crystal structure of the observed phases. The BET surface area of Si nanoparticles and high aspect ratio Si nanostructures (nanowires and nanotubes) are about 60 m2/g and 360 m2/g respectively. Raman spectrum of nanostructured Si showed both shift in the peak position and broadening of the Raman peak.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2008
- Accession Number
- ADA505865
Entities
People
- Andrey Bezmelnitsyn
- Keshab Gangopadhyay
- Maxim Shub
- Paul Anderson
- Rajagopalan Thiruvengadathan
- Shubhra Gangopadkyay
- Steven Apperson
- Wendy Balas