Plasmon Mediated, InGaAs/InP, Tunable Far-IR Detector

Abstract

Plasmon resonances in the two dimensional electron gas (2-deg) of a high electron mobility transistor (HEMT) can affect transport properties. The resonance frequency depends on the gate-tuned sheet charge density of the 2-deg and on the characteristic length of the gate metallization by which free space THz radiation couples to the plasmon. Thus, this type of device can be used as a tunable detector. This work presents an experimental investigation of such a device fabricated from the InGaAs/InP material system. E-beam lithography was used to fabricate a gate in the form of a grating with submicron period. Sensitivity of the conductance to incident THz fields is reported. Direct absorption of THz, temperature effects, and the effects of source to drain current on system performance are also investigated. It is expected that this class of device will find use in space-borne remote sensing applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2008
Accession Number
ADA506566

Entities

People

  • Brian Krejca
  • Himanshu Saxena
  • Mark Roland
  • Robert E. Peale
  • Walter R. Buchwald

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Charge Density
  • Detection
  • Detectors
  • Electron Beam Lithography
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • High Electron Mobility Transistors
  • Infrared Detectors
  • Materials
  • Metal-Semiconductor Junctions
  • Radiation
  • Remote Sensing
  • Semiconductor Devices
  • Semiconductors
  • Surface Plasmon Resonance

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Space