Bulk ZnO: Current Status, Challenges, and Prospects

Abstract

Rediscovered in the last decade, zinc oxide (ZnO) has attracted much attention as a promising material for many optoelectronics and to some extent microelectronics applications. However, a clear majority of effort expended in this fast developing field has been limited to heteroepitaxial structures grown on foreign substrates with lattice-parameter and thermal-expansion mismatch with ZnO which is detrimental. Recognizing the importance, the effort has shifted to include developing technologies capable of producing freestanding ZnO wafers in large-scale for ZnO based device applications, which is the subject matter of this manuscript. Three competing approaches -- hydrothermal method, melt growth (modifications of the well known Bridgman technique), and seeded vapor transport growth (or sublimation) -- have now reached the level which can be construed as commercialization. In this article, we discuss the progress, outstanding problems, and prospects of these growth methods employed for commercial manufacturing of ZnO wafers.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2009
Accession Number
ADA506636

Entities

People

  • D. Silversmith
  • H. Morkoc
  • J. Z. Zhang
  • Jiyun Song
  • V. Avrutin

Organizations

  • Virginia Commonwealth University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Critical Temperature
  • Crystal Growth
  • Crystals
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Epitaxial Growth
  • Heat Energy
  • Low Temperature
  • Mass Production
  • Mass Spectrometry
  • Materials
  • Melting Point
  • Optical Properties
  • Temperature Gradients
  • Transition Temperature
  • Transitions

Fields of Study

  • Materials science

Readers

  • Economics
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene