High Mobility 4H-SiC Trenched Gate MOSFETs

Abstract

A new 4H-SiC trenched gate MOSFET structure with epitaxial buried channel improving the channel mobility is reported. Fabricated devices subject to rapid thermal annealing at 850 deg C for 5 min exhibit a peak field-effect mobility of 104 cm(2)/Vs at room temperature (25 deg C) and a high peak of 269 cm(2)/Vs at 200 deg C, which are among the highest levels reported to date.

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Document Details

Document Type
Technical Report
Publication Date
Aug 09, 2006
Accession Number
ADA507271

Entities

People

  • J. H. Zhao
  • Jian Wu
  • Jinyin Hu
  • T. Burke
  • Xiangchong Li
  • Xufeng Wang

Organizations

  • United States Army Research, Development and Engineering Command

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Compound Semiconductors
  • Electronics
  • Elements
  • Information Operations
  • Mobility
  • New Brunswick
  • Silicon Carbide
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Exercise and Sports Science.
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.