Characterization of HVPE-Grown Thick GaAs Structures for IR and THz Generation

Abstract

In a previous paper, we described a method for growing thick epitaxial layers of GaAs on orientation-patterned wafers by low pressure hydride vapor phase epitaxy. The low pressure method allows for rapid growth at rates well above 100 microns/hr and layers up to 1 mm thick have been successfully produced. In this paper we present characterization of these layers by optical microscopy, Hall measurement, and cathodoluminescence imaging. We demonstrate growth of low free carrier concentration, mm-thick orientation-patterned GaAs for efficient nonlinear optical conversion.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2006
Accession Number
ADA509611

Entities

People

  • Christene Lynch
  • D. Bliss
  • D. Weyburne
  • José Luis González
  • M. Avella
  • P. S. Kuo
  • T. Zens
  • Xiaolong Yu

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Crystal Growth
  • Crystal Structure
  • Crystals
  • Demographic Cohorts
  • Electron Microscopes
  • Epitaxial Growth
  • Microscopes
  • Microscopy
  • Military Research
  • Scanning Electron Microscopes
  • Standards
  • Template Patterns
  • Transition Temperature
  • Universities
  • Vapor Phases

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanofabrication and Microfabrication.