Digital Control of Exchange Interaction in a Spin-based Silicon Quantum Computer

Abstract

The objective of the proposed work was to demonstrate that digital switching of the exchange interaction by real space electron transfer will provide a viable method for accurate control of inter-qubit interactions. In order to fix the strength of the exchange interaction at the fabrication stage we proposed a new technology for 3D confinement of electrons by abrupt epitaxial Si/SiGe interface. During the course of the project we developed CVD growth of high mobility 2D electron gases in Si/SiGe, low damage nanofabrication techniques, in situ cleaning and conformal SiGe re-growth.

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Document Details

Document Type
Technical Report
Publication Date
Sep 07, 2009
Accession Number
ADA510293

Entities

People

  • James C. Sturm
  • Leonid P. Rokhinson

Organizations

  • Purdue University

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Charge Transfer
  • Computers
  • Electron Density
  • Electron Gas
  • Electron Transfer
  • Electrons
  • Elements
  • Energy Levels
  • Low Temperature
  • Mobility
  • Quantum Computers
  • Quantum Computing
  • Quantum Dots
  • Quantum Wells
  • Semiconductors
  • Two Dimensional
  • Universities

Fields of Study

  • Materials science
  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Quantum Science - Quantum Dots
  • Space