Flip Chip Bonding of 68 x 68 MWIR LED Arrays
Abstract
The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68 68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15- m-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2009
- Accession Number
- ADA510369
Entities
People
- E. J. Koerperick
- Fouad Kiamilev
- J. P. Prineas
- J. T. Olesberg
- Kimberley A. Olver
- L. M. Murray
- Monica Taysing-lara
- Naresh C. Das
- Tom F. Boggess
Organizations
- United States Army Research Laboratory