Progress in Orientation-Patterned GAAS for Next-Generation Nonlinear Optical Devices (Postprint)
Abstract
Orientation-patterned GaAs (OPGaAs) shows great promise as a nonlinear optical material for frequency conversion in the 2-5 micron and 8-12 micron regions. We report recent progress in each of the three main areas of OPGaAs development: fabrication of patterned templates using a combination of wafer bonding and MBE techniques; thick-layer HVPE growth; and material and OPO device characterization. This work has led to significant improvements in material quality, specifically reduced optical loss, increased sample thickness, improved patterned domain fidelity, and greater material uniformity. Advances in material quality have in turn enabled demonstration of OPO devices operating in the 3-5 micron spectral region. Optical loss and OPO performance measurements on a series of OPGaAs samples are presented, with the goal of understanding how these properties are influenced by growth conditions, and how OPO performance may be improved. Research continues on understanding loss mechanisms, correlating performance with material properties, transitioning the technology into an industrial process, and extending it to additional materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2008
- Accession Number
- ADA511589
Entities
People
- Candace Lynch
- David H. Tomich
- David. Bliss
- Rita D. Peterson
Organizations
- Air Force Research Laboratory