Short-Pulse Dense Wavelength-Division-Multiplexed Optical Interconnects
Abstract
WDM interconnects between silicon chips: short-pulse WDM, dense receiver/transmitter arrays, synchronization with short pulses, data resynchronization, skew and jitter removal, ultrafast optoelectronic gate, possible time-division demultiplexing and wavelength conversion component, controllable by electronics, GaInAsN for high uniformity long-wavelength devices, unity sticking coefficient of N should allow high uniformity devices for long wavelengths, potentially usable in long wavelength WDM systems. WDM interconnect between silicon chips has been successfully demonstrated. Synchronization of signals using short optical pulses has been demonstrated. GaInAsN is a promising material for uniform long-wavelength devices, with cw VCSEL. Ultrafast optically controlled optical gate may allow fast, digital, electrically-controllable wavelength converting and switching devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 18, 2000
- Accession Number
- ADA512162
Entities
People
- David A. Miller
- James S. Harris Jr.
Organizations
- Stanford University