Atomic Layer Deposition Enabled Interconnect Technology for Vertical Nanowire Arrays
Abstract
We have demonstrated an atomic layer deposition (ALD) enabled interconnect technology for vertical, c-axis oriented gallium nitride (GaN) nanowire (NW, 5-10 um in length, 80-200 nm in diameter) arrays encapsulated by Benzocyclobutene (BCB). The nano-scaled ALD multilayer is essential to provide conformal co-axial dielectric (ALDalumina)/ conductor (ALD-tungsten) coverage and precise thickness control for nanowire metallization. Furthermore, we have successfully developed a fabrication process to locally remove and connect tungsten (W) interconnect on NWs. Cross-sectional image taken in a focused ion beam (FIB) tool confirms the conformality of ALD interconnects. Photoluminescence (PL) wavelengths of the nanowires array can be tuned dynamically by changing the input current supplied to ALD-tungsten interconnect which heats nanowires. Such an experiment also demonstrated the quality of interconnect. This interconnect technology can be applied to various vertical nanowire-based devices, such as nanowire light emitting diodes (LEDs), nanowire-based field effect transistors (FETs), resonators, batteries or biomedical applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 2009
- Accession Number
- ADA512284
Entities
People
- Dragos Seghete
- Jen-hau Cheng
- John B. Schlager
- Kris A. Bertness
- Myongjai Lee
- Norman A. Sanford
- Ronggui Yang
- Steven M. George
- Y. C. Lee
Organizations
- University of Colorado Boulder