Erratic Dislocations Within Funnel Defects in AlN Templates for AlGaN Epitaxial Layer Growth

Abstract

We report our transmission electron microscopy observations of erratic dislocation behavior within funnel-like defects in the top of AlN templates filled with AlGaN from an overlying epitaxial layer. This dislocation behavior is observed in material where phase separation is also observed. Several bare AlN templates were examined to determine the formation mechanism of the funnels. Our results suggest that they are formed prior to epitaxial layer deposition due to the presence of impurities during template re-growth. We discuss the erratic dislocation behavior in relation to the presence of the phase-separated material and the possible effects of these defects on the optoelectronic properties.

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Document Details

Document Type
Technical Report
Publication Date
May 21, 2009
Accession Number
ADA513035

Entities

People

  • D. Yoo
  • H. J. Kim
  • J.-h. Ryou
  • Michael E. Hawkridge
  • Russell D. Dupuis
  • S. Choi
  • Z. Liliental-weber

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Diffraction
  • Dislocations
  • Electromagnetic Spectra
  • Electron Microscopy
  • Epitaxial Growth
  • Materials
  • Materials Science
  • Optoelectronic Devices
  • Phase
  • Phase Separation
  • Quantum Wells
  • Semiconductors
  • Standards
  • Template Patterns
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Applied Combinatorial Optimization and Logic Circuit Design.
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene