Defect Doping of InN

Abstract

InN films grown by molecular beam epitaxy have been subjected to 2 MeV He(+) irradiation followed by thermal annealing. Theoretical analysis of the electron mobilities shows that thermal annealing removes triply charged donor defects, creating films with electron mobilities approaching those predicted for uncompensated, singly charged donors. Optimum thermal annealing of irradiated InN can be used to produce samples with electron mobilities higher than those of as-grown films. We have shown that rapid thermal annealing of irradiated InN produces films with high electron mobilities, and recovers photoluminescence. This result may be attributed to the removal of triply charged, relaxed indium vacancies and the stability of singly charged nitrogen vacancies.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 28, 2008
Accession Number
ADA513050

Entities

People

  • E. E. Haller
  • H. C. Van Genuchten
  • H. Lu
  • J. W. Ager Iii
  • K. M. Yu
  • R. E. Jones
  • Shengxi Li
  • W. J. Schaff
  • W. Walukiewicz
  • Z. Liliental-weber

Organizations

  • University of California, Berkeley

Tags

DTIC Thesaurus Topics

  • Annealing
  • Dielectric Permittivity
  • Electrical Engineering
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Energy
  • Engineering
  • Hall Effect
  • High Energy
  • Materials
  • Materials Science
  • Mobility
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Solid State Physics
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology
  • Structural Dynamics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene