The Structural Quality of AlxGa1-xN Epitaxial Layers Grown by Digitally-Alloyed Modulated Precursor Epitaxy Determined by Transmission Electron Microscopy

Abstract

AlxGa1-xN layers of varying composition (0.5 < xAl < 1.0) grown in the digitally-alloyed modulated precursor epitaxial regime employing AlN and GaN binary sub-layers by metal organic chemical vapor deposition on AlN templates were characterized by transmission electron microscopy techniques. Fine lamellae were observed in bright field images that indicate a possible variation in composition due to the modulated nature of growth. In higher Ga content samples (xAl < 0.75), a compositional inhomogeniety associated with thicker island regions was observed, which is determined to be due to large Ga-rich areas formed at the base of the layer. Possible causes for the separation of Ga-rich material are discussed in the context of the growth regime used.

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Document Details

Document Type
Technical Report
Publication Date
Mar 02, 2009
Accession Number
ADA513084

Entities

People

  • Dongwon Yoo
  • Hee J. Kim
  • Jae-Hyun Ryou
  • Michael E. Hawkridge
  • Russell D. Dupuis
  • Suk Choi
  • Z. Liliental-weber

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Contrast
  • Diffraction
  • Electron Energy
  • Electron Microscopy
  • Electrons
  • Energy
  • Epitaxial Growth
  • High Angles
  • Materials
  • Materials Science
  • Microscopy
  • Precursors
  • Surface Roughness
  • Template Patterns
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene