Relation Between Structural and Optical Properties of InN and InxGa1-xN Thin Films

Abstract

Transmission Electron Microscopy (TEM) and optical measurements obtained from InN and InN-xGaxN films (0 < x < 0.54) grown by Molecular Beam Epitaxy are presented. Energy gaps measured by absorption, PR, and PL for InN films grown on c-plane Al2O3 were in the range of 0.7 eV. No In or other inclusions were observed in these films, ruling out the possibility of a strong Mie scattering mechanism. In the InN-xGaxN films the relationship between the structural properties and the optical properties, in particular the presence or absence of a Stokes shift between absorption and PL, is discussed. TEM studies show that high quality layers do not have a Stokes shift. Some films had compositional ordering; these films also showed a shift between absorption edge and luminescence peak.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2009
Accession Number
ADA513483

Entities

People

  • D. N. Zakharov
  • E.e. Haller
  • J. Jasinski
  • J. W. Ager Iii
  • J. Wu
  • K. M. Yu
  • Lu Jie
  • Shengxi Li
  • W. J. Schaff
  • W. Walukiewicz
  • Z. Liliental-weber

Organizations

  • University of California, Berkeley

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Absorption
  • Band Gaps
  • Diffraction
  • Electron Density
  • Electron Diffraction
  • Electron Microscopy
  • Electrons
  • Engineering
  • Films
  • Materials
  • Materials Science
  • Microscopy
  • Mie Scattering
  • Optical Properties
  • Scattering
  • Thin Films
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene