Tunnel Quantum Dot Intersubband Detector for Terahertz Frequencies
Abstract
The most significant accomplishments in this project are: (a) the demonstration of a semiconductor based terahertz detector using quantum dots, capable of detection at high temperatures (80-150K) with very low dark currents: (b) a bias-selective multicolor long wavelength quantum dot intersublevel detector with tunability over 3 distinct wavelengths. The detector incorporates a novel double barrier tunneling heterostructure with each absorbing quantum dot layer; (c) a novel intersubband quantum ring terahertz detector with a resonant tunneling filter to reduce the dark current, which is the lowest ever measured. This device demonstrates terahertz detection with 0.4A/W in the 3-6THz range and detection in the 10-11 ThZ range at 120K.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 08, 2009
- Accession Number
- ADA513784
Entities
People
- Pallab K. Bhattacharya
Organizations
- University of Michigan