Growth and Characterization of Low Density InAs/GaAs Quantum Dots (QD) for Quantum Information Processes

Abstract

The aim of this project was to study the characteristics of the large QDs in a PC-based mu-cavity and finally develop the single photon source (SPS). Better understanding of large QDs without mu-cavity would lead to better understanding of the large QDs with mu-cavity. So, the PI studied the large single QD and coupled QD further on their optical properties. Design of PC-based mu-cavity should be followed for the growth and fabrication of photonic-crystal based mu-cavity with low density In(Ga)As/GaAs QDs, which can act as a single photon source. The final goal of the 3-year project is to develop the PC-based single photon source with large In(Ga)As/GaAs QDs.

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Document Details

Document Type
Technical Report
Publication Date
Feb 10, 2010
Accession Number
ADA514080

Entities

People

  • Won J. Choi

Organizations

  • Korea Institute of Science and Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystals
  • Fabrication
  • Information Processing
  • Low Density
  • Photonic Crystals
  • Quantum Computing
  • Quantum Cryptography
  • Quantum Dots
  • Quantum Information
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Quantum Computing