Electrical and Thermal Performance of 1200 V, 100 A, 200 deg C, 4H-SiC MOSFET-based Power Switch Modules
Abstract
In this paper we report the electrical and thermal performance characteristics of 1200 V, 100 A, 200-deg C (Tj), SiC MOSFET power modules configured in a dual-switch topology. Each switch-diode pair was populated by 2 x 56 mm2 SiC MOSFETs and 2 x 32 mm2 SiC JBS diodes providing the 100 A rating at 200-deg C. Static and dynamic characterization, over rated temperature and power ranges, highlights the performance potential of this technology for highly efficient drive and power conversion applications. Electrical performance comparisons were also made between SiC power modules and equivalently rated and packaged IGBT modules. Even at a modest Tj=125-deg C, conduction and dynamic loss evaluation for 20kHz, Id=100A operation demonstrated a significant efficiency advantage (38-43%) over the IGBT components. Initial reliability data also illustrates the potential for SiC technology to provide robust performance in harsh environments.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 2009
- Accession Number
- ADA514684
Entities
People
- Anant Agarwal
- Charles Scozzie
- James Scofield
- Jim Richmond
- Neil Merrett
- Scott Leslie
Organizations
- Air Force Research Laboratory