Threshold Voltage Tuning of Metal-Gate MOSFET Using an Excimer Laser

Abstract

This report presents a localized method for tuning the threshold voltages (Vt) of multilayer metal-gate MOSFET devices with a spatial area theoretically limited by the wavelength of the laser beam. This technique allows an independent means to tailor threshold voltage on a device-to-device basis that provides greater design flexibility. This maskless technique allows tailoring of thresholds by tuning the work function of the gate by intermixing titanium and titanium nitride using a laser pulse. The source and drains of the MOSFET are simultaneously annealed by the laser.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2010
Accession Number
ADA516598

Entities

People

  • A. D. Ramirez
  • B. W. Offord
  • R. P. Lu
  • S. D. Russell

Organizations

  • Naval Information Warfare Systems Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Complementary Metal-Oxide Semiconductors
  • Department Of Defense
  • Excimer Lasers
  • Governments
  • Ion Implantation
  • Laser Beams
  • Laser Pulses
  • Lasers
  • Materials
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Metals
  • Oxides
  • Physical Vapor Deposition
  • Semiconductors
  • United States Government
  • Work Functions

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.

Technology Areas

  • Directed Energy