Performance of AlGaN/GaN High Electron Mobility Transistors with AlSiN Passivation

Abstract

This program was focused on the development of alternative and superior dielectric passivations to AlGaN/GaN HEMT transistors for mm- wave operation. A new process was developed to deposit by LPCVD the composite dielectric of AlSiN containing as much as 10 atomic % by weight of aluminum. This dielectric partially depletes the 2DEG which has be effectively used in place of a gate extension. The resulting devices do not display non-linear increases in access resistances, and they deliver state-of-the-art power performance at large drain bias at frequencies up to 10 and 35 GHz.

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Document Details

Document Type
Technical Report
Publication Date
Mar 04, 2010
Accession Number
ADA516658

Entities

People

  • Ekaterina Harvard
  • James R. Shealy
  • Richard Brown

Organizations

  • Cornell University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Chemical Vapor Deposition
  • Dielectrics
  • Electron Mobility
  • Electrons
  • Elements
  • Field Effect Transistors
  • Frequency
  • High Electron Mobility Transistors
  • Low Noise Amplifiers
  • Materials
  • Measurement
  • Microwave Frequency
  • Power Amplifiers
  • Resistance
  • Silicon Carbide
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics