Dynamics of Forward Voltage Drift in 4H-SiC PiN Diodes
Abstract
4H-silicon carbide (SiC) is desired for electronic devices designed to be operated at high temperatures or at high electric powers. However, difficulties in the growth of high-purity, low defect density substrates and epitaxial layers have limited the use of SiC in commercial and military applications. One such impediment is the nucleation and expansion of Shockley stacking faults (SSFs) during forward-bias device operation (stressing), which induces an undesirable increase in the forward voltage drop (Vf). While efforts have been made to reduce the number of SSFs within a given device, these defects continue to provide a significant technological hurdle to the commercialization of 4H-SiC electronic devices, most especially for larger-area power devices that require close to defect-free active regions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2008
- Accession Number
- ADA517995
Entities
People
- J. D. Caldwell
- Karl D. Hobart
- O. J. Glembocki
- R. E. Stahlbush
Organizations
- United States Naval Research Laboratory