High Power Microwave (HPM) and Ionizing Radiation Effects on CMOS Devices

Abstract

Integrated circuits (ICs) are inherently complicated and made worse by increasing transistor quantity and density. This trend potentially enhances concomitant effects of high energy radiation and local or impressed electromagnetic interference (EMI). The reduced margin for signal error may counter any gain in radiation hardness from smaller device dimensions. Isolated EMI and ionizing radiation studies on circuits have been conducted extensively over the past 30 years. However, little focus has been placed on the combined effects. To investigate the effect of combined EMI and ionizing radiation, two complementary metal oxide semiconductor (CMOS) inverter technologies (CD4069 and SN74AUC1G04) were analyzed for their static performance in response to EMI and up to 146 kRad(tissue) gamma radiation. The combined EMI and gamma radiation environment, compared to the isolated effects, produced the most severe degradation in inverter performance for both device technologies.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2010
Accession Number
ADA518384

Entities

People

  • Nicholas A. Estep

Organizations

  • Air Force Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Bipolar Junction Transistors
  • Charge Carriers
  • Complementary Metal-Oxide Semiconductors
  • Electromagnetic Fields
  • Electromagnetic Radiation
  • Electromagnetic Scattering
  • Energy Transfer
  • Gamma Rays
  • Integrated Circuits
  • Ionizing Radiation
  • Jet Propulsion
  • Logic Gates
  • Metal Oxide Semiconductors
  • Radiation Effects
  • Semiconductor Devices
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.
  • Optical Fiber Sensing and Electromagnetic Propagation.

Technology Areas

  • Directed Energy
  • Microelectronics