1.55 Micrometer Sub-Micron Finger, Interdigitated MSM Photodetector Arrays with Low Dark Current

Abstract

We have achieved following goals: * We have demonstrated the possibility to use a multiple wafer molecule beam epitaxy (MBE) system to grow 1.55 micrometer InGaAs based MSM detector structure on 4 inch GaAs substrate. * Design a mask to use flip-chip approach to fabricate MSM detector. A metal solder bump inkjet system was acquired. The system has the capability to deposit 25,000 metal bumps per second. A process development is under the way to develop the technique to use this advanced system for MSM detector bonding to replace the conventional wire bonding. * Transparent IZGO and IZO TFTs have been demonstrated, which can be integrated with MSM detectors.

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Document Details

Document Type
Technical Report
Publication Date
Feb 02, 2010
Accession Number
ADA518988

Entities

People

  • Fan Ren
  • Stephen Pearton

Organizations

  • University of Florida

Tags

DTIC Thesaurus Topics

  • Dacron
  • Detectors
  • Dielectrics
  • Electrical Properties
  • Electron Mobility
  • Engineering
  • Field Effect Transistors
  • Films
  • Flip Chips
  • High Electron Mobility Transistors
  • Materials
  • Materials Science
  • Measurement
  • Metal-Semiconductor-Metal Photodetectors
  • Semiconductors
  • Thin Film Transistors
  • Thin Films

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology