III-Nitride Based Optoelectronics
Abstract
Ill-Nitride based optoelectronics support a variety of promising applications due to their tunable direct bandgap extending from deep ultraviolet towards green. We started by studying blue and green light emitting diode (LED) structures based on InGaN/GaN multiquantum wells (MQWs), grown on regular and lateral epitaxial overgrowth (LEO) GaN templates. We apply a unique pulsed epitaxy approach to achieve green LEDs. We also studied InGaN quantum dots for improved emission in the green spectrum. A novel hybrid green light-emitting diodes (LEDs) comprised of w-ZnO/ (InGaN/GaN) multi-quantum-wells/p-GaN were developed. The low temperature pulsed laser deposition (PLD) of the ZnO avoids the degradation typical when capping structures via metalorganic chemical vapor deposition. The results indicate that hybrid LED structures hold the prospects for developmenting green LEDs with superior performance. We also report on the current-voltage characteristic under forward biases obtained in low leakage, small size p-(In,Ga)N/GaN-n multiquantum well diodes. The detection of very low photon fluxes was reported under gated biasing in the 1 MV/cm range. We also reported on the fabrication and current-voltage characteristics of nanostructured p-i-n photodiodes based on GaN. Strong rectifying behavior was obtained; In contrast to GaN bulk p-i-n diodes, devices reproducibly show ideality factors lower than 2.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2010
- Accession Number
- ADA518997
Entities
People
- Manijeh Razeghi
Organizations
- Northwestern University