Study of Residual Background Carriers in Midinfrared InAs/GaSb Superlattices for Uncooled Detector Operation

Abstract

The midinfrared 7 ML InAs/8 ML GaSb superlattices (SLs) were grown by molecular beam epitaxy at growth temperatures between 370 and 430 deg C in order to study the intrinsic characteristic of background carriers. Grown SLs were all residual p type with carrier densities in the low 10(exp 11)/sq cm, and a minimum density of 1.8 x 10(exp 11)/sq cm was obtained from the SL grown at 400 deg C. With increasing growth temperature, the in-plane carrier mobility decreased from 8740 to 1400 sq cm/V s due to increased interfacial roughness, while the photoluminescence intensity increased sixfold due to a decrease in the nonradiative defect densities.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2008
Accession Number
ADA519024

Entities

People

  • B. Ullrich
  • F. J. Brown
  • Frank Szmulowicz
  • H. J. Haugan
  • S. Elhamri
  • W. C. Mitchel

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Air Platforms
  • Sensors

DTIC Thesaurus Topics

  • Air Force
  • Air Force Research Laboratories
  • Carrier Mobility
  • Detection
  • Detectors
  • Electrical Properties
  • Infrared Detectors
  • Intensity
  • Materials
  • Mobility
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Photoluminescence
  • Residuals
  • Roughness
  • Superlattices
  • Transport Properties

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology