Strain and Polarization Studies of InGaN for Optoelectronic, Electronic, and Photovoltaic Applications
Abstract
This final report summarizes the investigation conducted at the University of Akron by Prof. Ernie Pan's group in close collaboration with AFRL Sensors Directorate (Dr. John Albrecht AFRL/IRDX). Through this work, we have co-developed electro-mechanical simulations that take into account material polarization and piezoelectric properties that cannot be suppressed in many group III-V semiconductor nanostructures. This work addresses key physics issues in these polarized semiconductors and also provides laboratory researchers with access to design and analysis specifics that are not accessible by or do not exist in the limited physical models available in commercial semiconductor modeling software. The specifics of these models and related publications are provided in the chapters of the report. Another important contribution is on the magnetoelectric (ME) effect of multiferroic composites. We found that while any imperfect interface would reduce the ME effect in multiferroic composites, suitably designed graded composites can substantially enhance the ME effect.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 14, 2009
- Accession Number
- ADA519405
Entities
People
- Ernie Pan
- John D. Albrecht
Organizations
- University of Akron