Growth of Thin Hetero-Epitaxial Layers of Graphite and Diamond on SIC for Carbon Based Electronics
Abstract
During the course of this work atmospheric and UHV techniques were developed for the production of few layer graphene on the Si and C face of SiC. In was found that control of the rate of Si loss (as determined by the surface temperature gradient) was necessary to produce high quality films on both the Si and C face. The quality of these films was confirmed by AFM, Hall, Raman, and high speed laser techniques. In particular the disorder ratio as determined by Raman analysis was less than .02. The results of the growth investigations were applied to the development of a commercial graphene materials growth reactor. One monolayer self supporting films of graphene we produced by a novel technique which under etched the SiC below the formed graphene. These self supporting layers have been used in fundamental studies on the mechanical and transport properties of graphene. Using the material developed in the project graphene gas sensors have been demonstrated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 2010
- Accession Number
- ADA519446
Entities
People
- M. G. Spencer
Organizations
- Cornell University College of Engineering