Growth and Characterization of III-V Nitride Quantum Dots and Quantum Wires

Abstract

Nano wires and quantum dots offer new dimensions in semiconductor devices. Potentially superior material quality as well as the large surface to volume ratio and the fact that nature gives you the nano dimensions makes these structures fruitful subjects for research. In particular GaN and AlN and other related compounds offer unique electrical and also optical properties. We have concentrated on the growth of the nano wires, the characterization of their properties, and the demonstration of potentially useful device structures.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 26, 2010
Accession Number
ADA520108

Entities

People

  • Abhishek Motayed
  • Albert V Davydov
  • Denis Tvetkov
  • John Melngailis
  • Noor Mohammad

Organizations

  • University of Maryland

Tags

DTIC Thesaurus Topics

  • Dielectric Gases
  • Diodes
  • Electrical Properties
  • Field Effect Transistors
  • Films
  • Light Emitting Diodes
  • Materials
  • Materials Processing
  • Nanoparticles
  • Nanowires
  • Optical Properties
  • P-N Junctions
  • Quantum Dots
  • Semiconductor Devices
  • Semiconductors
  • Thin Films
  • Transistors

Fields of Study

  • Materials science

Readers

  • Nanocomposite Materials Science
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing