AlInGaN Bandgap and Doping Engineering for Visible Laser Diodes
Abstract
We have successfully transferred MOCVD processes for producing high quality AlN epilayer templates, which were developed in our home-built growth system, to production scale systems with 6 pieces of 2-inch wafer capability. We consider this a critical step, as this capability enables us to have an ample supply of templates to make multiple runs per day, which is necessary for the development of growth processes for green LD structures. Furthermore, we have significantly improved the crystalline quality of these AlN epitemplates, as evidenced by a decrease in the FWHM of the XRD rocking curve of the asymmetric (102) reflection peak from greater than 400 arcsec to below 300 arc. We have successfully evolved our green light emitting diode (LED) structure to 500 nm LD structure by inserting cladding and light guiding layers. We have obtained a significant improvement in optical emission efficiency by depositing the emitter structures on AlN templates.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 02, 2010
- Accession Number
- ADA520632
Entities
People
- Hongxing Jiang
- Jingyu Lin
Organizations
- Kansas State University