Finite-Element Simulation for Electrothermal Characterization of High-Power Diode Laser Bars
Abstract
Simulation of semiconductor diode laser performance involves interaction between multiple physics domains. This report presents the governing equations and finite-element (FE) implementation of such a simulation, including coupled calculation of electronic band structure, determined by solving Schrodinger's equation; carrier distribution and potential in the active region, solved using a drift-diffusion model; electrostatic potential in the ohmic regions, governed by Laplace's equation; temperature distribution, governed by Fourier's law and the heat equation; and light propagation, described by Maxwell's equations. Preliminary simulation results are provided for stripe lasers based on the GaAs/AlGaAs material system, including asymmetrically waveguided devices. Important implementation issues are discussed, particularly computation across multiple length scales and formulation of appropriate boundary conditions. Simulation results are compared to previous calculations reported in the literature. Advancement of the technical component is paralleled by development of a graphical user interface for ease of use by non-experts in FE methods.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 31, 2010
- Accession Number
- ADA520837
Entities
People
- A. A. Bernussi
- Darryl James
- Jordan M. Berg
- Luis G. De Peralta
- Weston T. Hobdy
Organizations
- Texas Tech University