Development of III-Nitride Based THz Inter-Subband Lasers

Abstract

III-Nitrides, due to their large conduction band offset and fast transition speeds, are promising constituents for intersubband (ISB) devices. In addition, III-Nitrides are characterized by a very large phonon energy (90 meV). This makes them ideally suited to the realization of near room temperature operating THz lasers. The objective of this program has been to demonstrate the potential for using III-Nitrides to realize a room temperature operating terahertz intersubband laser.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 2009
Accession Number
ADA520903

Entities

People

  • Manijeh Razeghi

Organizations

  • Northwestern University

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Space

DTIC Thesaurus Topics

  • Band Structures
  • Chemical Vapor Deposition
  • Conduction Bands
  • Diffraction
  • Energy Bands
  • Materials
  • Measurement
  • Optical Properties
  • Quantum Cascade Lasers
  • Quantum Efficiency
  • Quantum Wells
  • Resonant Tunneling Diodes
  • Scattering
  • Semiconductors
  • Spectra
  • Students
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy