Low-Dimensional Mott Material: Transport in Ultrathin Epitaxial LaNiO3 Films

Abstract

Electrical resistivity and magnetotransport are explored for thin 3-30 nanometer, epitaxial LaNiO3 films. Films were grown on three different substrates to obtain LaNiO3 films that are coherently strained, with different signs and magnitude of film strain. It is shown that d-band transport is inhibited as the layers progress from compression to tension. The Hall coefficient is "holelike." Increasing tensile strain causes the film resistivity to increase, causing strong localization to appear below a critical thickness.

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Document Details

Document Type
Technical Report
Publication Date
Mar 18, 2010
Accession Number
ADA521956

Entities

People

  • Daniel Ouellette
  • James M. LeBeau
  • Junwoo Son
  • Leon Balents
  • Pouya Moetakef
  • S. J. Allen
  • Susanne Stemmer

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Carrier Mobility
  • D Band
  • Diffraction
  • Electron Electron Interactions
  • Electron Microscopes
  • Electrons
  • Energy Bands
  • Films
  • High Temperature
  • Magnetic Fields
  • Materials
  • Physical Properties
  • Resistance
  • Scattering
  • Tensile Strain
  • Thick Films

Readers

  • Mechanical Engineering/Mechanics of Materials.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.