AFOSR Wafer Bonding

Abstract

The concept of a Bonded Field-Effect Transistor has been successfully demonstrated, using an InGaAs/InAlAs MESFET Source/Gate region with an InGaN/GaN drain region. Bonding other material combinations such as Si-GaP and Si-GaN have been attempted and explored. Material non-uniformity severely impacts the ability of GaN to bond, and several process developments have been made to attempt to overcome this issue. Many possibilities exist for the continued exploration of this new class of devices, promising both high-frequency and high-voltage operation.

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Document Details

Document Type
Technical Report
Publication Date
Jul 31, 2009
Accession Number
ADA522052

Entities

People

  • Umesh Mishra

Organizations

  • University of California, Santa Barbara

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Compound Semiconductors
  • Conduction Bands
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Frequency
  • High Voltage
  • Materials
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • Voltage

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design