Fabrication and Characterization of Wound Capacitors using Amorphous Silicon Dioxide as the Dielectric Material (PREPRINT)
Abstract
Capacitors that perform well at temperatures exceeding 200 degree and have energy densities in excess of 5 J/sq cm are an enabling technology for many applications in automotive, geophysical exploration, aerospace, and the military. To address this need Nanohmics has been developing high energy density, temperature-stable film capacitors fabricated using amorphous silicon dioxide as the dielectric material. Fabrication begins with the deposition of ~0.4 micrometers silicon dioxide films on both sides of a 6-12 micrometers metalized flexible polymer substrate to form dielectric-coated electrodes. Next, two coated electrodes are wound together into a cylindrical shape to produce a capacitor. Measurements indicate that capacitors fabricated using amorphous silicon dioxide dielectric has stable capacitance, dissipation factor, and breakdown threshold over a wide temperature range. Energy densities in the 5 10 J/sq cm range are theoretically attainable using these materials and fabrication geometries.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 2008
- Accession Number
- ADA522063
Entities
People
- Byron G. Zollars
- Keith D. Jamison
- Mark Carter
- Mark W. Rumler
- Martin E Kordesch
- Roger D. Wood