Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Electro-optical Applications

Abstract

We have investigated for the first time the reflectivity and absorbance of black silicon-germanium (Si1-xGex). Black Si1-xGex was produced by metal enhanced chemical etching using nanometer-scale gold particles as catalyst and HF:H2O2:CH3COOH etchant. The etched surface was black, textured, and showed strong suppression of reflectivity and enhancement of absorption in the near-infrared region. These properties are consistent with Si1-xGex becoming highly micro-structured due to metal catalysis and wet etching. The lowering of reflection and enhancement of absorption in Si1-xGex is an important milestone towards practical, extended wavelength (~2 micrometers) electro-optical applications.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 01, 2010
Accession Number
ADA522107

Entities

People

  • Fred Semendy
  • Gregory Meissner
  • Patrick Taylor
  • Priyalal Wijewarnasuriya

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Etching
  • Chemical Vapor Deposition
  • Complementary Metal-Oxide Semiconductors
  • Detectors
  • Electronics Laboratories
  • Etching
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Materials
  • Measurement
  • Metal Oxide Semiconductors
  • Modules (Electronics)
  • Optical Properties
  • Reflectivity
  • Semiconductor Devices
  • Semiconductors
  • Three Dimensional

Readers

  • Optical Physics and Photonics.
  • Spectroscopy.
  • Surface Coatings Technology.