Electron Emission from GaN n-p Junctions
Abstract
We report on electron emission from cesiated GaN n-p junctions in forward bias. Surface electric fields ~3 V/um caused a fivefold increase in emission current. Initial maximum currents in excess of 200 nA degrade to 50 nA due to charge trapping but are quickly recovered at zero bias. Energy spectra confirm negative electron affinity 80 h after cesiation, indicate resistive losses limit the emission current, and reveal significant emission at energies above the Fermi level of the injecting contact.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 20, 2002
- Accession Number
- ADA522406
Entities
People
- Carmen S. Menoni
- Dinesh K. Patel
- J. L. Shaw
- J.i. Pankove
- Jim R. Smith
- Randolph E. Treece
Organizations
- United States Naval Research Laboratory