A Geometrically Non-linear Model of Ceramic Crystals with Defects Applied to Silicon Carbide (SiC)

Abstract

A model is developed for anisotropic ceramic crystals undergoing potentially large deformations that can occur under significant pressures or high temperatures. The model is applied to enable an improved understanding of silicon carbide (SiC), with a focus on hexagonal polytype 6H of alpha-SiC. Incorporated in the model are the following features: non-linear anisotropic thermoelasticity, piezoelectricity and electrostriction, nucleation and glide of Shockley partial dislocations on the basal plane, dilatation from point defects and elastic fields of dislocation lines, and cleavage fracture. Physical properties are obtained from experimental data and calculations reported in the literature.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2010
Accession Number
ADA522625

Entities

People

  • John D. Clayton

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Ceramic Materials
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Dielectric Permittivity
  • Dielectric Properties
  • Elastic Properties
  • Electrical Properties
  • Gruneisen Parameter
  • Mechanical Properties
  • Mechanics
  • Physical Properties
  • Plastic Properties
  • Point Defects
  • Silicon Carbide
  • Stresses
  • Thermal Conductivity

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology