Transconductance and Coulomb Blockade Properties of In-Plane Grown Carbon Nanotube Field Effect Transistors
Abstract
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 105. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e. laterally ordered and scalable, as required for advanced quantum electronic devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 01, 2010
- Accession Number
- ADA524117
Entities
People
- Daniel S. Choi
- Eui-Hyeok Yang
- Kitu Kumar
- Milan Begliarbekov
- Nan Ai
- Onejae Sul
- Qiang Song
- Stefan Strauf
Organizations
- Stevens Institute of Technology