Investigation into Self-Organizational Tendencies of Cobalt- and Titanium-Silicide Nanostructures on Si Surfaces

Abstract

This report results from a contract tasking Tel Aviv University as follows: To achieve this goal, the work will be divided into two principle parts: (a) self-organization of stepped substrates, and (b) ordered nanocrystal growth. In the first part, the experiments will be aimed at achieving full control over the substrate step characteristics, e.g. terrace width and step-bunch height, by varying the degree of wafer miscut and high temperature flash parameters (temperature, duration, and direction of the heating current relative to step orientation). The result of this stage will be variously spaced periodic step-structures. In the second part, Co and/or Ti will be deposited onto such 'templates', reacted with Si to form silicide dots, and their tendency for 2D ordering will be studied as a function of substrate periodicity and silicide nucleation and growth parameters.

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Document Details

Document Type
Technical Report
Publication Date
Sep 22, 2008
Accession Number
ADA524384

Entities

People

  • Ilan Goldfarb

Organizations

  • Tel Aviv University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electrons
  • Crystal Structure
  • Crystals
  • Electron Diffraction
  • Epitaxial Growth
  • Materials Science
  • Molecular Beam Epitaxy
  • Nanocrystals
  • Nanostructures
  • Nanotechnology
  • Self Organizing Systems
  • Semiconductors
  • Surface Properties
  • Three Dimensional
  • Transitions
  • Two Dimensional
  • Very Large Scale Integration

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space