Hall Effect Spintronics
Abstract
This report results from a contract tasking Tel Aviv University as follows: This project will attempt to develop a new type of magnetic memory devices based on the so-called Extraordinary Hall Effect (EHE) in which information is stored in nanometric magnetic units and detection of the stored data is performed by measurement of the Hall voltage across the current carrying memory unit. The objectives are: (1) development of films with room temperature out-of-plane magnetic anisotropy and enhanced extraordinary Hall effect coefficient;; (2) study of mechanisms responsible for the technically relevant parameters: coercive field, remanent magnetization, shape of the hysteresis loop, thermal coefficients and stability; (3) study of mechanisms and selection of tools to enhance the extraordinary Hall effect without compromising the magnetic properties of the chosen materials; and (4) fabrication and testing of memory devices with nanometric active elements. The work will include the following tasks: (1) manufacture of FeTb and CoCr films of variable concentration, thickness and deposition conditions (Months 1 - 6); (2) characterization, magnetic and magnetotransport measurements of FeTb and CoCr films (Months 1 - 6); (3) manufacture of CoPd and CoPt bilayers and multilayers (Months 7 - 12); (4) characterization, magnetic and magnetotransport measurements of CoPd and CoPt bilayers and multilayers (Months 7 - 12); and (5) manufacture and testing of nanoscale memory units and arrays (Months 5 - 12).
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 23, 2008
- Accession Number
- ADA524552
Entities
People
- Alexander Gerber
Organizations
- Tel Aviv University