Field Localization and Enhancement of Phase Locked Second and Third Harmonic Generation in Absorbing Semiconductor Cavities

Abstract

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650nm and 433nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics become localized inside the cavity leading to relatively large conversion efficiencies. Field localization plays a pivotal role and ushers in a new class of semiconductor-based devices in the visible and UV ranges.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2010
Accession Number
ADA525684

Entities

People

  • C. Cojocaru
  • F. Raineri
  • G. D'aguanno
  • I. Sagnes
  • J. Trull
  • M. Scalora
  • R. Vilaseca
  • Raghu G. Raj
  • V. Roppo
  • Y. Halioua

Organizations

  • United States Army Research, Development and Engineering Command

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Conversion
  • Demographic Cohorts
  • Dispersions
  • Efficiency
  • Energy
  • Energy Transfer
  • Frequency
  • Harmonics
  • Materials
  • Materials Science
  • Negative Index Metamaterials
  • Optical Phenomena
  • Refractive Index
  • Research Facilities
  • Semiconductors
  • Third Harmonic Generation

Fields of Study

  • Physics

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics