Compact Solid State Terahertz Detectors
Abstract
This report results from a contract tasking the University of Leeds as follows: Within the frame of this project attention will be focused on the low-frequency noise of the proposed devices. More specifically, the Johnson and shot noise, as well as 1/f noise spectra, will be measured at various temperatures from 4 K up to 300 K. The figure of merit commonly used to quantify the signal-to-noise ratio in infrared detectors is called the detectivity. This quantity, defined as the root-mean-square signal-to-noise ratio in a 1 Hz bandwidth per unit incident power per square root of the detector area, will be estimated under different bias voltages across the above temperature range. Two design, fabrication, and optimization cycles will be completed in 12 months. Each cycle will begin with workers at Leeds designing the delta-doped FET layers and submitting the complete layer structures for growth in their new GaAs MBE facility. Parts of the as-grown wafers will be sent to Manchester for optical characterization while a researcher at Leeds will fabricate the device structures. Following this, some of the devices will be dispatched to Vilnius for the electro-optic characterization. This will involve measuring the Terahertz photocurrent at a range of temperatures and wavelengths. The results of the characterization will be used to influence the second cycle of device designs. The deliverables of the project will be low temperature electro-optic characterization of the photon detector at Terahertz wavelengths, a mid-term progress report, and a final report including a "roadmap" for the eventual development of single photon devices and prototype focal-plane arrays of Terahertz detectors for operation with electro-thermal coolers at around 80 K.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 09, 2007
- Accession Number
- ADA526259
Entities
People
- Ed Linfield
- Gintaras Valusis
- Paul Harrison
Organizations
- University of Leeds