Extraordinary Transmission in the UV Range from Sub-wavelength Slits on Semiconductors
Abstract
In this paper we describe a way to achieve the extraordinary transmission regime from sub-wavelength slits carved on semiconductor substrates. Unlike metals, the dielectric permittivity of typical semiconductors like GaAs or GaP is negative beginning in the extreme UV range (lambda less than or equal to 270nm). We show that the metal-like response of bulk semiconductors exhibits surface plasmon waves that lead to extraordinary transmission in the UV and soft X-ray ranges. The importance of realistic material response versus perfect conductors is also discussed. These findings may be important in high resolution photo-lithography, near field optical devices and ultra high density optical storage.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2010
- Accession Number
- ADA526570
Entities
People
- D. De Ceglia
- M. A. Vincenti
- M. Buncick
- M. J. Bloemer
- M. Scalora
- N. Aközbek
Organizations
- United States Army Research, Development and Engineering Command