Design and Analysis of In0.53Ga0.47As/InP Symmetric Gain Optoelectronic Mixers
Abstract
A symmetric gain optoelectronic mixer based on an indium gallium arsenide (In0.53Ga0.47As)/indium phosphide (InP) symmetric heterojunction phototransistor structure is being investigated for chirped-AM laser detection and ranging (LADAR) systems operating in the "eye-safe" 1.55 microns wavelength range. Signal processing of a chirped-AM LADAR system is simplified if the photodetector in the receiver is used as an optoelectronic mixer (OEM). Adding gain to the OEM allows the following transimpedance amplifier's gain to be reduced, increasing bandwidth and improving the system's noise performance. A symmetric gain optoelectronic mixer based on a symmetric phototransistor structure using an indium gallium arsenide narrow bandgap base and indium phosphide emitter/collector layers is proposed. The devices are simulated with the Synopsis TCAD Sentaurus tools. The effects of base-emitter interface layers base thickness and the doping densities of the base and emitters on the device performance are investigated. AC and DC simulation results are compared with a device model. Improved responsivity and lower dark current are predicted for the optimized InGaAs/InP device over previously reported devices with indium aluminum arsenide emitter/collector layers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2010
- Accession Number
- ADA527899
Entities
People
- Justin R. Bickford
- Neal Bambha
- Nuri W. Emanetoglu
- Wang Zhang
Organizations
- United States Army Research Laboratory