Approach for Dislocation Free GaN Epitaxy

Abstract

The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contrast imaging (ECCI) is employed to identify extended defects over large (tens of microns) areas. Using this method, it is illustrated that by confining the epitaxial growth, high quality GaN can be grown with dislocation densities approaching zero.

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Document Details

Document Type
Technical Report
Publication Date
Jul 22, 2010
Accession Number
ADA528019

Entities

People

  • C. R. Eddy Jr.
  • J. K. Hite
  • Michael A. Mastro

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Boundaries
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Growth
  • Crystals
  • Dislocations
  • Electron Microscopy
  • Electrons
  • Epitaxial Growth
  • Geometry
  • Grain Boundaries
  • Materials
  • Microscopy
  • Military Research
  • Scanning Electron Microscopy
  • Thickness
  • Transmission Electron Microscopy

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space