High-Electron Mobility Graphene Channel Transistors for Millimeter-Wave Applications

Abstract

Graphene-channel field effect transistors (GFETs) on semi-insulating SiC substrates were fabricated and characterized. In the first GFETs, the device exhibits n-type FET operation with the transconductance of 0.1 mS/mm at the drain voltage of 0.5 V. The current gain cutoff frequency characterized by S parameter measurement is 0.5 GHz. These characteristics are primarily limited by the low carrier mobility of 50 cm2/V.s. evaluated by Hall measurement. Further improvement in the graphene quality and the process technique to avoid the damage on graphene channel will be the key targets of the study in the next year.

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Document Details

Document Type
Technical Report
Publication Date
Aug 31, 2010
Accession Number
ADA528076

Entities

People

  • Tetsuya Suemitsu

Organizations

  • Tohoku University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Carrier Mobility
  • Chemical Vapor Deposition
  • Electron Mobility
  • Electrons
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Graphene
  • Materials
  • Measurement
  • Millimeter Waves
  • Mobility
  • Raman Spectra
  • Semiconductors
  • Silicon Carbide
  • Substrates
  • Transistors

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics
  • Microelectronics - Graphene