5-W Microwave Integrated Circuits (MIC) Gallium Nitride (GaN) Class F Power Amplifier Operating at 2.8 GHz

Abstract

A key component of microwave telecommunication systems is the power amplifier (PA). The design parameters of a communication system, such as link performance, power budget, and thermal design are typically driven by the power amplifier's linearity, output power, and efficiency. These design parameters of PA are the key to ensuring an efficient system because the PA is the most power-consuming circuit in the communication system. In an effort to have students involved in this research area, the International Microwave Symposium (IMS) sponsored by IEEE Microwave Theory and Technique Society (MTT-S) has introduced a High Efficiency Power Amplifier Design Competition. In this report, we present a 2.8-GHz, 5-W, highly efficient PA based on a wide bandgap gallium nitride (GaN) high electron mobility transistor (HEMT) device (CGH 40010f from CREE). The PA design was presented at the 2010 IMS Student Design Competition and achieved the competition goal of output power greater than 5 W with a measured power added efficiency (PAE) of 61% at 2.8 GHz.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2010
Accession Number
ADA529761

Entities

People

  • Caroline W. Waiyaki

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Circuits
  • Communication Systems
  • Compound Semiconductors
  • Electron Mobility
  • Electron Tubes
  • Electrons
  • Gallium
  • Gallium Nitrides
  • High Electron Mobility Transistors
  • Integrated Circuits
  • Measurement
  • Microwave Integrated Circuits
  • Monolithic Microwave Integrated Circuits
  • Networks
  • Power Amplifiers
  • Semiconductors

Readers

  • Academic Conference Management
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics