Charge Transport in Dual Gated Bilayer Graphene with Corbino Geometry

Abstract

The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperaturedependent resistance is quantitatively described by a two channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low temperature transport is similar to previous studies of dual-gated bilayer graphene with edges suggesting that edge transport does not play an important role.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 2010
Accession Number
ADA530439

Entities

People

  • Jun Yan
  • Michael Fuhrer

Organizations

  • University of Maryland

Tags

DTIC Thesaurus Topics

  • Agreements
  • Band Gaps
  • Dielectrics
  • Electric Fields
  • Electrical Properties
  • Energy Bands
  • Fabrication
  • Field Effect Transistors
  • Geometry
  • Graphene
  • High Temperature
  • Low Temperature
  • Materials
  • Resistance
  • Spectroscopy
  • Transport Ships
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene