Collaborative Research and Development (CR&D). Delivery Order 0071: Magneto-Transport Measurements on Nanostructured Semiconductors
Abstract
This research in support of the Air Force Research Laboratory Materials and Manufacturing Directorate was conducted at Wright-Patterson AFB, Ohio from 19 April 2007 through 14 September 2007. Temperature-dependent resistivity and Hall effect at a fixed field value of 0.5 T, variable-magnetic field Hall effect at temperatures below 20 K, and Shubnikov-de Haas measurements have been performed on InAs/GaSb quantum wells and superlattice and on AlGaN/GaN heterostructures. The goal of the studies performed on InAs/GaSb superlattices, which were grown on a GaSb substrate, was to determine the impact of various growth conditions on the background carrier density and mobility. The work on the InAs/GaSb quantum wells, which were grown on a GaAs substrate, was aimed at evaluating the transport properties of these structures which were grown by a procedure that produces interface misfit formation to completely relax the lattice mismatch resulting from growing GaSb directly on GaAs. The purpose of the investigation of AlGaN/GaN materials was to study the impact of a thin AlN interlayer, inserted between AlGaN and GaN layers, on the transport properties of this heterostructure. While further work is still needed in each of the three projects, important achievements have been obtained in each of the areas. In this report, we highlight preliminary results in each of the three projects.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 2007
- Accession Number
- ADA530721
Entities
People
- Said Elhamri
Organizations
- Universal Technology Corporation (United States)