In0.69Al0.31As0.41Sb0.59/In0.27Ga0.73Sb double-heterojunction bipolar transistors with InAs0.66Sb0.34 contact layers

Abstract

Presented are the first DC and RF results for a double heterojunction bipolar transistor, at a 6.2A lattice constant, incorporating InAs(sub 0.66) Sb(sub 0.34). These devices show excellent performance with a high collector current density of 1.9 10(exp 5) A sq cm, high breakdown voltage over 2.5 V, high short-circuit current gain cutoff frequency of 59 GHz, and maximum frequency of oscillation of 34 GHz.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2010
Accession Number
ADA531430

Entities

People

  • Doewon Park
  • J. G. Champlain
  • R. Bass
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Accumulators
  • Bipolar Junction Transistors
  • Circuits
  • Current Density
  • Electron Beam Lithography
  • Electron Microscopy
  • Electronics
  • Electronics Laboratories
  • Field Effect Transistors
  • Frequency
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • Low Voltage
  • Materials
  • Scanning Electron Microscopy
  • Short Circuits
  • Transistors

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Semiconductor Device Technology